Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications.For these applications, RRAM elements are arranged into Facial Roller Crossbar arrays, where rectifying selector devices are required for correct read operation of